Experimental Investigation of Adjacent Hall Structures Parameters
نویسندگان
چکیده
Adjacent Hall microsensors, comprising a silicon substrate and four contacts, providing simultaneously two supply inputs and two differential outputs, are characterized. The voltage related sensitivity is in the order of 0.11T, and a cancellation method for offset compensation is used, achieving residual offset in the micro scale which is also compared to a single Hall plate. Keywords—Adjacent Hall sensors, offset compensation, voltage related sensitivity, 0.18μm CMOS technology.
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